Which of the diode, transistor, and field-effect transistor will cause permanent damage after breakdown?

Release time:

2022-01-07

The breakdown of a pn junction can be divided into avalanche breakdown, tunnel breakdown, and thermal breakdown.     The first two are generally non-destructive. If the reverse voltage is immediately reduced, the performance of the pn junction can be restored. If the voltage is not reduced immediately, the pn junction will be damaged. When a reverse voltage is applied to the pn junction, if there are no good heat dissipation conditions, the temperature of the junction will rise, and the reverse current will further increase. This cycle will repeat, and eventually, the pn junction will break down. Breakdown caused by thermal instability is called thermal breakdown, which has permanent destructive effects. The breakdown of the pn junction is an important electrical property of the pn junction. The breakdown voltage limits the p

      The breakdown of a pn junction can be divided into avalanche breakdown, tunnel breakdown, and thermal breakdown.
 
      The first two are generally non-destructive. If the reverse voltage is immediately reduced, the performance of the pn junction can be restored. If the voltage is not reduced immediately, the pn junction will be damaged. When a reverse voltage is applied to the pn junction, if there are no good heat dissipation conditions, the temperature of the junction will rise, and the reverse current will further increase, causing this cycle to repeat, ultimately leading to the breakdown of the pn junction. Breakdown caused by thermal instability is called thermal breakdown, which has permanent destructive effects. The breakdown of the pn junction is an important electrical property of the pn junction. The breakdown voltage limits the operating voltage of the pn junction, so semiconductor devices have certain requirements for the breakdown voltage. However, many devices such as Zener diodes, avalanche diodes, and tunnel diodes can utilize the breakdown phenomenon for manufacturing.
 
      There are two physical mechanisms for reverse-biased pn junction breakdown: Zener breakdown and avalanche breakdown. Due to the tunneling mechanism, heavily doped pn junctions will experience Zener breakdown. In heavily doped pn junctions, the conduction band and valence band on both sides are very close under reverse bias conditions, allowing electrons to tunnel directly from the P region to the N region.

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